630N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
630N Datasheet PDF : 11 Pages
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Typical Characteristic (Continued)
100
10
100µs
1
0.1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
1ms
10ms
10
100
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.001
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Capability
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
10
TJ = 175oC
5
TJ = -55oC
TJ = 25oC
0
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
20
15
VGS = 10V
VGS = 5V
VGS =4.5V
10
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
0
0
1
2
3
4
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
3.0
1.2
VGS = VDS, ID = 250µA
2.5
1.0
2.0
1.5
0.8
1.0
0.5
0
-80
VGS = 10V, ID = 9.3A
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
0.6
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B
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