BAS86 View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
MFG CO.
BAS86 Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
BAS86
FIG.1-- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT
TEMPERATURE
200
100
0
100
200
TA- Ambient temperature( )
FIG. 2--TYPICAL INSTANTANEOUS FORWORD
CHARACTERISTICS
1000
100
10
TJ=125
T J=25
1
T J = -4 0
0 .1
0 .0 1
0
0.2 0.4 0.6 0.8 1.0 1.2
VF - Forward Voltage ( V )
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS
1000
100
10
1
0 .1
T J= 1 2 5
100
75
50
25
0 .01
0
10 20 30 40 50 60
VR - Reverse voltage ( V )
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
14
12
10
8
6
4
2
0
5 10 15 20 25 30
VR - Reverse voltage ( V )
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