BC847BV View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
BC847BV Datasheet PDF : 8 Pages
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NXP Semiconductors
NPN general purpose double transistor
Product data sheet
BC847BV
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector-base cut-off current
IEBO
hFE
VBE
VCEsat
emitter-base cut-off current
DC current gain
base-emitter voltage
collector-emitter saturation
voltage
VBEsat
Cc
Ce
fT
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 30 V
−
−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
μA
IC = 0; VEB = 5 V
−
−
100 nA
IC = 2 mA; VCE = 5 V
200 −
450
IC = 2 mA; VCE = 5 V
580 655 700 mV
IC = 10 mA; IB = 0.5 mA
−
−
100 mV
IC = 100 mA; IB = 5 mA; note 1
−
−
300 mV
IC = 10 mA; IB = 0.5 mA
−
755 −
mV
IE = Ie = 0; VCB = 10 V; f = 1 MHz −
−
1.5 pF
IC = ic = 0; VEB = 500 mV;f = 1 MHz −
11
−
pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −
−
MHz
300
handbook, full pagewidth
hFE
200
VCE = 5 V
MBH724
100
0
10−2
10−1
1
10
102
IC (mA)
103
Fig.2 DC current gain; typical values.
2001 Sep 10
4
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