2N5210 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
2N5210 Datasheet PDF : 6 Pages
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2N5209 2N5210
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5209
2N5210
hFE
—
100
300
200
600
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ,
f = 1.0 kHz)
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
2N5209
2N5210
150
—
250
—
150
—
250
—
VCE(sat)
—
0.7
Vdc
VBE(on)
—
0.85
Vdc
fT
30
—
MHz
Ccb
—
4.0
pF
hfe
—
150
600
250
900
NF
dB
—
3.0
—
2.0
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ,
f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2N5209
2N5210
—
4.0
—
3.0
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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