2N5038 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5038 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5038 2N5039
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5038
2N5039
IC=0.2A ;IB=0
90
V
75
VCEsat-1
Collector-emitter
saturation voltage
2N5038
2N5039
IC=12A ;IB=1.2A
IC=10A ;IB=1A
1.0
V
VCEsat-2 Collector-emitter saturation voltage IC=20A ;IB=5A
2.5
V
VBEsat Base-emitter saturation voltage
IC=20A ;IB=5A
3.3
V
2N5038 IC=12A ; VCE=5V
VBE
Base-emitter on voltage
2N5039 IC=10A ; VCE=5V
1.8
V
2N5038 VCE=70V; IB=0
ICEO
Collector cut-off current
2N5039 VCE=55V; IB=0
ICEX
Collector cut-off current
2N5038
2N5039
VCE=140V; VBE=-1.5V
VCE=100V; VBE=-1.5V ;TC=150℃
VCE=110V; VBE=-1.5V
VCE=85V; VBE=-1.5V TC=150℃
2N5038
IEBO
Emitter cut-off current
VEB=5V; IC=0
2N5039
20 mA
5.0
10
mA
5.0
10
5
mA
15
hFE-1
DC current gain
IC=2A ; VCE=5V
50
250
2N5038 IC=12A ; VCE=5V
hFE-2
DC current gain
20
2N5039 IC=10A ; VCE=5V
Is/b
Second breakdown collector current
VCE=28V,
VCE=45V(t=1.0s Nonrepetitive)
5
0.9
Switching times
100
A
tr
Rise time
ts
Storage time
tf
Fall time
For 2N5038
IC=12A ;IB1=- IB2=1.2A ;VCC=30V
For 2N5039
IC=10A ;IB1=- IB2=1A ;Vcc=30V
0.5 μs
1.5 μs
0.5 μs
2
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