STP105N3LL View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package

STMicroelectronics 

STP105N3LL

1

Electrical ratings

Electrical ratings

Symbol

Table 2. Absolute maximum ratings

Parameter

Value

VDS Drain-source voltage

VGS Gate-source voltage

ID

Continuous drain current at TC = 25 °C

(silicon limited)

ID

Continuous drain current at TC = 100 °C

(silicon limited)

ID

Continuous drain current at TC = 25 °C

(package limited)

(1)

IDM

Pulsed drain current

PTOT Total dissipation at TC = 25 °C

Derating factor

(2)

EAS

Single pulse avalanche energy

Tstg Storage temperature

Tj Max. operating junction temperature

1. Pulse width limited by safe operating area

2. Starting Tj = 25°C, IAV = 40 A

30

± 20

150

105

80

320

140

0.9

150

-55 to 175

175

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Value

1.1

62.5

Unit

V

V

A

A

A

A

W

W/°C

mJ

°C

°C

Unit

°C/W

°C/W

DocID023976 Rev 2

3/13

13

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