BC549 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
MFG CO.
BC549 Datasheet PDF : 5 Pages
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NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
DC Current Gain
hFE
IC=10µA, VCE=5V
B/C
Collector Emitter Saturation Voltage VCE (sat)
Base Emitter Saturation Voltage
Base Emitter On Voltage
*VBE (sat)
VBE (on)
IC=2mA, VCE=5V
BC549A/BC550A
BC549B/550B
BC549C/550C
BC549/550
IC=10mA, IB=0.5mA
IC=10mA, IB=See Note (1)
*IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=10µA, VCE=5V
IC=100µA, VCE=5V
IC=2mA, VCE=5V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
Collector Base Capacitance
Small Signal Current
fT IC=10mA, VCE=5V, f=100MHz
Ccbo
VCE=10V, IE=0, f=1MHz
hfe
IC=2mA, VCE=5V, f=1KHz
BC549/550
BC549B/550B
Noise Figure
BC549C/550C
NF IC=200µA, VCE=5V, RS=2 kΩ,
f=30 Hz - 15KHz
IC=200µA, VCE=5V, RS=100
kΩ, f=1KHz
Note 1- IB is value for which IC= 11mA at VCE=1V
*Pulse Test = 300µs - Duty Cycle = 2%
BC549_550Rev_1 081205E
MIN
100
110
200
420
110
0.55
MIN
125
240
450
BC549,A.B,C
BC550,A,B,C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
TYP MAX UNITS
220
450
800
800
0.25
V
0.60
V
0.60
V
1.1
V
0.52
V
0.55
V
0.70
V
TYP MAX UNITS
250
MHz
2.5
pF
900
500
900
2.5
dB
10
dB
Continental Device India Limited
Data Sheet
Page 2 of 5
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