NTD4809NA View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
NTD4809NA Datasheet PDF : 8 Pages
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NTD4809NA
TYPICAL PERFORMANCE CURVES
2500
2000
VDS = 0 V
Ciss
VGS = 0 V
1500
1000 Crss
TJ = 25°C
Ciss
500
Coss
0
Crss
10
5
0
5
10 15 20
25
VGS
VDS
GATE- TO- SOURCE OR DRAIN- TO- SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
8
6
QT
Q1
Q2
4
2
ID = 30 A
VGS = 4.5 V
0
TJ = 25°C
0
5
10
15
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
1000
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100
30
VGS = 0 V
25 TJ = 25°C
20
td(off)
tr
10
td(on)
tf
1
1
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
15
10
5
0
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
100 ms
10
1
0.1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1 ms
10 ms
dc
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
120
ID = 15 A
100
80
60
40
20
0
25
50
75
100
125
150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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