2N5400 View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
MFG CO.
2N5400 Datasheet PDF : 5 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
2N5400
TO-92
Plastic Package
EBC
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
VALUE
120
130
5.0
600
625
5.0
1.5
12
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
83.3
200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
*VCEO
IC=1mA, IB=0
120
Collector Base Voltage
VCBO
IC=100µA, IE=0
130
Emitter Base Voltage
VEBO
IE=10µA, IC=-0
5.0
Collector Cut Off Current
ICBO
VCB=100V, IE=0
VCB=100V, IE=0,
Ta=100ºC
Emitter Cut Off Current
IEBO
VEB=4V, IC=0
DC Current Gain
*hFE
IC=1mA, VCE=5V
30
IC=10mA, VCE=5V
40
IC=50mA, VCE=5V
40
Collector Emitter Saturation Voltage *VCE (sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
*Pulse Test: Pulse Width=300µs, Duty Cycle=2%
2N5400Rev100104E
Continental Device India Limited
Data Sheet
UNIT
V
V
V
mA
mW
mw/ºC
W
mw/ºC
ºC
MAX
100
100
50
180
0.2
0.5
1.0
1.0
ºC/W
ºC/W
UNIT
V
V
V
nA
µA
nA
V
V
V
V
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