2N3773 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N3773 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3773
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=8A; IB=0.8A
VCEsat-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A
VBE
Base-emitter on voltage
IC=8A ; VCE=4V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=140V; IB=0
VCE=140V; VBE(off)=1.5V
TC=150℃
VEB=7V; IC=0
hFE-1
DC current gain
IC=8A ; VCE=4V
hFE-2
Is/b
DC current gain
IC=16A ; VCE=4V
Second breakdown collector current VCE=100Vdc,t=1.0s,
With base forward biased
Nonrepetitive
MIN TYP. MAX UNIT
140
V
1.4
V
4.0
V
2.2
V
2.0
mA
2.0
10.0
mA
5.0
mA
15
60
5
1.5
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
2
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