Philips Semiconductors
P-channel enhancement mode
vertical D-MOS transistor
Product specification
BSS92
FEATURES
• Direct interface to C-MOS, TTL, etc.
• High-speed switching
• No secondary breakdown.
APPLICATIONS
• Line current interrupter in telephony applications
• Relay, high speed and line transformer drivers.
DESCRIPTION
P-channel enhancement mode vertical D-MOS transistor
in a TO-92 (SOT54) variant package.
PINNING - TO-92 (SOT54) variant
PIN
SYMBOL
DESCRIPTION
1
g
gate
2
d
drain
3
s
source
handbook, halfpage
1
2
3
d
g
MAM144
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSO
ID
RDSon
Ptot
yfs
PARAMETER
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
drain-source on-state resistance
total power dissipation
forward transfer admittance
CONDITIONS
open drain
ID = −100 mA; VGS = −10 V
Tamb ≤ 25 °C
VDS = −25 V; ID = −100 mA
MIN.
−
−
−
−
−
60
TYP.
−
−
−
10
−
200
MAX. UNIT
−240 V
±20 V
−150 mA
20
Ω
1
W
−
mS
1997 Jun 19
2