BF840 View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
BF840 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium frequency transistor
Product specification
BF840
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
67
675
−
−
TYP.
−
−
−
725
0.3
380
MAX.
100
100
222
775
−
−
UNIT
nA
nA
mV
pF
MHz
1999 Apr 12
3
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