BUL791 View Datasheet(PDF) - Power Innovations

Part Name

Description

MFG CO.

BUL791

NPN SILICON POWER TRANSISTOR

Power Innovations 

BUL791

NPN SILICON POWER TRANSISTOR

JULY 1991 - REVISED SEPTEMBER 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

VCEO(sus)

ICES

IEBO

VBE(sat)

VCE(sat)

hFE

VFCB

Collector-emitter

sustaining voltage

Collector-emitter

cut-off current

Emitter cut-off

current

Base-emitter

saturation voltage

Collector-emitter

saturation voltage

Forward current

transfer ratio

Collector-base forward

bias diode voltage

IC = 100 mA

VCE = 700 V

VCE = 700 V

VEB = 9 V

IB = 400 mA

IB = 400 mA

IB = 400 mA

IB = 400 mA

VCE = 1 V

VCE = 1 V

VCE = 5 V

ICB = 60 mA

L = 25 mH

VBE = 0

VBE = 0

IC = 0

IC = 2 A

IC = 2 A

IC = 2 A

IC = 2 A

IC = 10 mA

IC = 2 A

IC = 8 A

(see Note 3)

400

V

TC = 90°C

10

µA

200

1

mA

(see Notes 4 and 5)

TC = 90°C

0.94 1

V

0.86

(see Notes 4 and 5)

TC = 90°C

0.25 0.4

V

0.3

10 16.5

6

12

22

2

6.5 14

850

mV

NOTES: 3. Inductive loop switching measurement.

4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located

within 3.2 mm from the device body.

thermal characteristics

RθJA

RθJC

PARAMETER

Junction to free air thermal resistance

Junction to case thermal resistance

MIN TYP MAX UNIT

62.5 °C/W

1.66 °C/W

inductive-load switching characteristics at 25°C case temperature

PARAMETER

tsv

Storage time

tfi

Current fall time

txo

Cross over time

tsv

Storage time

tfi

Current fall time

IC = 2 A

L = 1 mH

IC = 2 A

L = 1 mH

TEST CONDITIONS

IB(on) = 400 mA

IB(off) = 800 mA

IB(on) = 400 mA

IB(off) = 250 mA

VCC = 40 V

VCLAMP = 300 V

VCC = 40 V

VCLAMP = 300 V

MIN TYP MAX UNIT

2.2

3

µs

95 180

ns

210 300

ns

4

6

µs

120 230

ns

resistive-load switching characteristics at 25°C case temperature

PARAMETER

tsv

Storage time

tfi

Current fall time

IC = 2 A

VCC = 300 V

TEST CONDITIONS

IB(on) = 400 mA

IB(off) = 400 mA

MIN TYP MAX UNIT

2.2

3

µs

160 250

ns

PRODUCT INFORMATION

2

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