400
VCE = 5V
300
200
100
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA =-55°C
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 9 hFE vs. IC @ VCE = 5V
Typical N-Channel MOSFET (ESD Protected) Characteristics
1.4
1.2
1.0
VGS = 8V
0.8
0.6
0.4
VGS = 10V
VGS = 6V
VGS = 5V
VGS = 4V
0.8
VDS = 10V
TA = 150°C
0.7
TA = 125°C
0.6
0.5
0.4
0.3
0.2
TA = -55°C
TA = 25°C
TA = 85°C
0.2
VGS = 3V
0.1
0
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Output Characteristics
2
VDS = VGS
VDS = 10V
ID = 1mA
Pulsed
1.5
0
0
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 11 Transfer Characteristics
10
VGS = 10V
Pulsed
TA = 125°C
TA = 150°C
TA = 85°C
1
1
TA = -55°C
0.5
TA = 25°C TA = 0°C TA = -25°C
0
-50 -25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 12 Gate Threshold Voltage
vs. Junction Temperature
0.1
0.001
0.01
0.1
1
ID, DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
DS30750 Rev. 4 - 2
6 of 10
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LMN400E01