LMN400E01-7 View Datasheet(PDF) - Diodes Incorporated.
Part Name
Description
MFG CO.
LMN400E01-7
Diodes Incorporated.
LMN400E01-7 Datasheet PDF : 10 Pages
| |||
Electrical Characteristics: ESD Protected N Channel MOSFET (Q2) @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
V(BR)DSS
60
Zero Gate Voltage Drain Current (Drain Leakage
Current)
IDSS
Gate-Body Leakage Current, Forward
IGSSF
Gate-Body Leakage Current, Reverse
IGSSR
ON CHARACTERISTICS (Note 4)
Gate Source Threshold Voltage (Control Supply
Voltage)
VGS(th)
1
Static Drain-Source On-State Voltage
VDS(on)
Typ
1.6
0.09
0.6
On-State Drain Current
Static Drain-Source On Resistance
ID(on)
500
1.6
RDS(on)
1.2
Forward Transconductance
gFS
80
260
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS*
Turn-On Delay Time
Ciss
Coss
Crss
td(on)
Turn-Off Delay Time
td(off)
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
VSD
0.88
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
IS
Maximum Pulsed Drain-Source Diode Forward
Current
ISM
Max Unit
Test Condition
V VGS = 0V, ID = 10uA
1
µA VGS =0V, VDS = 60V
10
µA VGS = 20V, VDS = 0V
-10
µA VGS = -20V, VDS = 0V
2.5
1.5
3.75
3
2
V VDS = VGS, ID = 0.25mA
VGS = 5V, ID = 50mA
V
VGS = 10V, ID = 500mA
mA
VGS = 10V,
VDS ≥2*VDS(ON)
VGS = 5V, ID = 50mA
Ω
VGS = 10V, ID = 500mA
mS
VDS ≥2*VDS(ON),
ID = 200 mA
50
pF
25
pF
VDS = -25V, VGS = 0V,
f = 1MHz
5
pF
20
ns VDD = 30V, VGS =10V,
ID = 200mA,
40
ns RG = 25 Ohm, RL = 150
Ohm
1.5
V VGS = 0V, IS = 300 mA*
300
mA
800
mA
* Pulse Test: Pulse width, tp <300 us, Duty Cycle, d ≤0.02
Notes: 4. Short duration test pulse used to minimize self-heating effect.
DS30750 Rev. 4 - 2
4 of 10
www.diodes.com
LMN400E01
Share Link: 