SVD8N60F View Datasheet(PDF) - Silan Microelectronics
Part Name
Description
MFG CO.
SVD8N60F Datasheet PDF : 7 Pages
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SVD8N60T/SVD8N60F
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RșJC
RșJA
SVD8N60T
0.85
62.5
SVD8N60F
2.6
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=7.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=7.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max. Unit
--
V
10 µA
±100 nA
4.0 V
-- 0.96 1.2 Ω
-- 1095
--
93
--
pF
--
2
--
--
39
--
--
29
--
ns
--
248
--
--
36
--
-- 26.8 --
--
5.1
--
nC
--
8.5
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
IS
Integral Reverse P-N
Pulsed Source Current
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=8.0A,VGS=0V
Reverse Recovery Time
Trr
IS=8.0A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µS
Notes:
1. L=19.5mH,IAS=7.0A,VDD=50V,RG=25Ω,starting TJ=25°C;
2. Pulse Test: Pulse width 300ȝs,Duty cycle2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
365
3.4
Max. Unit
8.0
A
28
1.4 V
--
ns
--
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7
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