SIHF720(2014) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
SIHF720 Datasheet PDF : 8 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF720, SiHF720
Vishay Siliconix
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-1
91043_01
20 µs Pulse Width
TC = 25 °C
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
VGS
Top 15 V
10 V
8.0 V
7.0 V
100
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-1
91043_02
20 µs Pulse Width
TC = 150 °C
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
10
TJ = 25 °C
TJ = 150 °C
1
0.1
0.01
4
VDS = 26.2V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3.5
ID = 3.3 A
3.0 VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91043_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
1000
800
600
400
200
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
100
91043_05
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 ID = 3.3 A
16
VDS = 320 V
VDS = 200 V
12
VDS = 80 V
8
4
0
0
91043_06
For test circuit
see figure 13
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-2355-Rev. C, 08-Dec-14
3
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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