PHP78NQ03LT View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
PHP78NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
60
10 V
ID 6 V
(A)
5V
40
4.5 V
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4V
3.5 V
20
VGS = 3 V
40
ID
(A)
30
20
10
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Tj = 175 οC
Tj = 25 οC
0
0
0.4
0.8
1.2
1.6
2
VDS (V)
0
0
2
3
4
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS ≥ ID x RDSON
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
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2
60
RDSon VGS = 3 V
3.5 V
a
(mΩ)
1.6
40
1.2
03aa27
20
4V
5V
6V
10 V
0
0
10
20
30
40
50
ID (A)
0.8
0.4
0
-60
0
60
120 Tj (oC) 180
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = -R---D----RS---oD---n-S-(--o2--5-n--°--C---)
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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