Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter
Rth(j-mb) thermal resistance from junction to mounting
base
Rth(j-a) thermal resistance from junction to ambient
Conditions
Figure 4
vertical in still air; SOT78 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT428 packages
4.1 Transient thermal impedance
Value Unit
1.6 K/W
60 K/W
50 K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2
10-5
single pulse
10-4
10-3
10-2
10-1
03ag18
P
δ
=
tp
T
tp
t
T
1
10
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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