PHP78NQ03LT View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
PHP78NQ03LT Datasheet PDF : 14 Pages
| |||
Philips Semiconductors
PHP/PHB/PHD78NQ03LT
N-channel enhancement mode field-effect transistor
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 kΩ
tp ≤ 50 µs; pulsed;
duty cycle 25 %; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; VGS = 10 V
Tmb = 100 °C; VGS = 10 V
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs
Min
Max Unit
-
25
V
-
25
V
-
±15
V
-
±20
V
-
61
A
-
43
A
-
75
A
-
53
A
-
228
A
-
93
W
−55
+175 °C
−55
+175 °C
-
75
A
-
228
A
9397 750 08916
Product data
Rev. 01 — 14 November 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
2 of 14
Share Link: 