E5551 View Datasheet(PDF) - Temic Semiconductors
Part Name
Description
MFG CO.
E5551 Datasheet PDF : 21 Pages
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e5551
Absolute Maximum Ratings
Parameters
Symbol
Value
Unit
Maximum DC current into Coil 1/ Coil 2
Icoil
10
mA
Maximum AC current into Coil 1/ Coil 2, f = 125 kHz
icoil pp
20
mA
Power dissipation (dice) 1)
Ptot
100
mW
Electro-static discharge maximum to
Vmax
2000
V
MIL-Standard 883 C method 3015
Operating ambient temperature range
Tamb
–40 to +85
°C
Storage temperature range 2)
Tstg
–40 to +125
°C
Maximum assembly temperature for less than 5 min 3)
Tsld
+150
°C
Notes: 1)
2)
3)
Free-air condition, time of application: 1 s
Data retention reduced
Assembly temperature of 150°C for less than 5 minutes does not affect the data retention.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
Operating Characteristics
Tamb = 25°C; fRF = 125 kHz, reference terminal is VSS
Parameters
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ RF frequency range
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply current
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ (see figure 27)
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Clamp voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Programming voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Programming time
Startup time
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Data retention
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Programming cycles
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Supply voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Coil voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Coil voltage
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Damping resistor
Comments
Symbol Min.
Typ.
fRF
100
125
Read and write over the full
temperature range
IDD
5
Programming over the full
IDD
100
temperature range
10 mA current into Coil1/2 Vcl
9.5
From on-chip HV-
Generator
Vpp
16
tP
18
tstartup
1)
tretention
10
1)
ncycle 100 000
Read and write
Read-mode, T = – 30°C
Read and write
Programming,
RF field not damped
VDD
VDD
Vcoil pp
Vcoil pp
RD
300
Max.
150
7.5
200
11.5
20
4
1.6
2.0
6.0
10
Unit
kHz
µA
µA
V
V
ms
ms
Years
V
V
V
V
W
Note 1)
Since EEPROM performance may be influenced by assembly and packaging, we can confirm the
parameters for dow (= die-on-wafer) and ICs assembled in standard package.
18 (21)
Rev. A2, 19-Apr-00
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