H11B1TM View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
H11B1TM Datasheet PDF : 10 Pages
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Absolute Maximum Ratings (TA = 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute
maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
EMITTER
IF
VR
IF(pk)
PD
DETECTOR
BVCEO
BVCBO
BVECO
PD
IC
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Continuous Collector Current
Value
-50 to +150
-40 to +100
260 for 10 sec
250
3.3
80
3
3.0
150
2.0
30
30
5
150
2.0
150
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
V
V
V
mW
mW/°C
mA
©2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
2
www.fairchildsemi.com
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