2N5109 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
MFG CO.
2N5109 Datasheet PDF : 1 Pages
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2N5109
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The 2N5109 is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
IC
400 mA
VCE
PDISS
20 V
1.0 W @ TA = 25 OC
2.5 W @ TC = 75 OC
1 = Emitter 2 = Base
3 = Collector
CHARACTERISTICS TA = 25 OC
SYMBOL
TEST CONDITIONS
BVCEO
IC = 5.0 mA
BVCER
IC = 5.0 mA
RBE = 10Ω
BVCBO
IC = 100 µA
ICEX
VCE = 35 V
VCE = 15 V
VBE = -1.50 V
VBE = -1.50 V TC = 150 OC
ICEO
VCE = 15 V
IEBO
VEB = 3.0 V
hFE
VCE = 15 V
IC = 50 mA
VCE = 5.0 V
IC = 360 mA
VCE(SAT)
IC = 100mA
IB = 10 mA
MINIMUM
20
40
40
40
5.0
ft
VCE = 15 V
COB
VCB = 15 V
IC = 50 mA
f = 200 MHz
f = 1.0 MHz
1200
NF
VCE = 15 V IC = 10 mA RG = 50 Ω f = 200 MHz
Gve
VCC = 15 V IC = 50 mA f = 50 to 216 MHz
1.1
Pin
VCC = 15 V IC = 50 mA Rs = 50 Ω f = 200 MHz
NONE
TYPICAL MAXIMUM
5.0
20
100
220
0.5
3.5
3.0
0.1
UNITS
V
V
V
mA
µA
µA
---
V
MHz
pF
dB
dB
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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