NTE6409 View Datasheet(PDF) - NTE Electronics
Part Name
Description
MFG CO.
NTE6409 Datasheet PDF : 2 Pages
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance
Temperature Coefficient
η
rBB
αrBB
VB2B1 = 10V, Note 3
0.68 – 0.82
VB2B1 = 3V, IE = 0
4.7 7.0 9.1 kΩ
VB2B1 = 3V, IE = 0, TA = –55° to +125°C 0.1 – 0.9 %/°C
Emitter Saturation Voltage VEB1(sat) VB2B1 = 10V, IE = 50mA, Note 4
Modulated Interbase Current IB2(mod) VB2B1 = 10V, IE = 50mA
Emitter Reverse Current
IEB2O VB2E = 30V, IB1 = 0
Peak Point Emitter Current
IP VB2B1 = 25V
Valley Point Current
IV VB2B1 = 20V, RB2 = 100Ω, Note 4
Base–One Peak Pulse
Voltage
VOB1
– 3.5 – V
– 15 – mA
– 0.005 0.2 µA
– 1 2 µA
8 10 18 mA
67–V
Note 3. Intrinsic Standoff Ratio, η, is defined by the equation:
η=
VP – VF
VB2B1
Where: VP = Peak Point Emitter Voltage
VB2B1 = Interbase Voltage
VF = Emitter to Base–One Junction Diode Drop ([ 0.45V @ 10µA)
Note 4. Use pulse techniques: PW [ 300µs, Duty Cycle ≤ 2% to avoid internal heating due to inter-
base modulation which may result in erroneous readings.
.210 (5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.030 (.762) Max
Emitter
.018 (0.45)
Base 1
45°
Base 2/Case
.041 (1.05)
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