2SC3854 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
MFG CO.
2SC3854 Datasheet PDF : 3 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
ICBO
Collector cut-off current
VCB=160V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
hFE
DC current gain
IC=3A ; VCE=4V
fT
Transition frequency
IC=0.5A ; VCE=12V
Product Specification
2SC3854
MIN TYP. MAX UNIT
120
V
6
V
1.5
V
100 μA
100 μA
50
20
MHz
2
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