M8GZ47 View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
M8GZ47 Datasheet PDF : 5 Pages
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SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State
Current
I
II
Gate Trigger Voltage
III
IV
I
SM8GZ47
II
SM8JZ47
III
Gate Trigger
IV
Current
I
SM8GZ47A
II
SM8JZ47A
III
IV
Peak On−State Voltage
Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of Off−State
Voltage
SM8GZ47
SM8JZ47
SM8GZ47A
SM8JZ47A
Critical Rate of
Rise of Off−State
Voltage at
Commutation
SM8GZ47
SM8JZ47
SM8GZ47A
SM8JZ47A
SYMBOL
TEST CONDITION
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j−c)
VDRM = Rated
T2 (+), Gate (+)
VD = 12V
RL = 20Ω
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
VD = 12V
RL = 20Ω
T2 (−), Gate (+)
T2 (+), Gate (+)
T2 (+), Gate (−)
T2 (−), Gate (−)
T2 (−), Gate (+)
ITM = 12A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di /dt) c = −4.5A / ms
MIN TYP. MAX UNIT
―
―
20
µA
―
―
1.5
―
―
1.5
V
―
―
1.5
―
―
―
―
―
30
―
―
30
―
―
30
―
―
―
mA
―
―
20
―
―
20
―
―
20
―
―
―
―
―
1.5
V
0.2
―
―
V
―
―
50
mA
―
―
3.6 °C / W
―
300
―
V / µs
―
200
―
10
―
―
V / µs
4
―
―
MARKING
* NUMBER
*1
*2
*3
SYMBOL
TOSHIBA PRODUCT MARK
SM8GZ47, SM8GZ47A
TYPE
SM8JZ47, SM8JZ47A
SM8GZ47A, SM8JZ47A
*4
MARK
M8GZ47
M8JZ47
A
Example
8A : January 1998
8B : Febrary 1998
8L : December 1998
2
2001-07-13
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