2N5241 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5241 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
IC=2A; IB=0.4A
VCB=400V; IE=0
TC=125℃
VCE=400V; IB=0
VEB=5V; IC=0
hFE
DC current gain
IC=2.5A ; VCE=5V
Product Specification
2N5241
MIN TYP. MAX UNIT
400
V
2.0
V
2.0
V
0.2
2.0
mA
5.0
mA
1.0
mA
15
35
2
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