2SC3858 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2SC3858 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3858
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
200
V
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
2.5
V
100 μA
100 μA
hFE
DC current gain
IC=8A ; VCE=4V
50
180
fT
Transition frequency
IC=1A ; VCE=12V
20
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
300
pF
Switching times
固IN电C半H导AN体GE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
hFE classifications
IC=10A;RL=4Ω
IB1=- IB2=1A
VCC=40V
0.50
1.80
0.60
μs
μs
μs
Y
P
G
50-100 70-140 90-180
2
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