2SC2578 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

2SC2578

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

www.jmnic.com

2SC2578

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞

V(BR)EBO Emitter-base breakdown voltage

IC=0 ;IE=5mA

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE1

DC current gain

VCB=100V; IE=0

VEB=4V; IC=0

IC=1A ; VCE=5V

hFE2

DC current gain

IC=3A ; VCE=5V

VCE(sat) Collector-emitter saturation voltage IC=3A ; IB=0.3A

MIN TYP. MAX UNIT

140

V

100

V

6

V

0.1

mA

0.1

mA

55

160

50

2

V

JMnic

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