STFW4N150 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STFW4N150

N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

STMicroelectronics 

STFV4N150 - STFW4N150 - STP4N150 - STW4N150

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 TO-247 TO-220FH TO-3PF

VDS Drain-source voltage (VGS = 0)

1500

V

VGS Gate- source voltage

± 30

V

Drain current (continuous) at

ID

TC = 25 °C

4

4

4 (1)

4 (1)

A

ID

IDM (1)

Drain current (continuous) at

TC = 100 °C

Drain current (pulsed)

2.5

2.5

2.5 (1)

2.5 (1)

A

12

12

12 (1)

12 (1)

A

PTOT Total dissipation at TC = 25 °C

160

40

Tbd

W

Tstg Storage temperature

-55 to 150

°C

Tj

Max. operating junction temperature

150

°C

1. Pulse width limited by safe operating area

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Rthj-amb

Thermal resistance junction-case

max

Thermal resistance junction-

ambient max

Value

Unit

TO-220 TO-247 TO-220FH TO-3PF

0.78

3.12

Tbd °C/W

62.5

50

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

4

A

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

350

mJ

3/16

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