MT46V16M16P-75E View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
MT46V16M16P-75E Datasheet PDF : 80 Pages
| |||
256Mb: x4, x8, x16
DDR SDRAM
Figure 46: Auto Refresh Mode
CK#
CK
CKE
COMMAND1
T0
tIS tIH
tIS tIH
NOP 2
T1
T2
T3
CK
tCH tCL
VALID
PRE
NOP2
NOP2
A0-A9,
A11, A121
A101
BA0, BA11
DQS5
DQ5
DM5
ALL BANKS
ONE BANK
tIS tIH
Bank(s)4
tRP
T4
((
Ta0
))
((
))
((
))
((
))
((
AR
))
((
NOP2, 3
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
tRFC
Ta1
((
Tb0
))
((
))
((
))
((
VALID
))
((
AR6
))
((
NOP2, 3
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
Tb1
NOP2
tRFC5
Tb2
ACT
RA
RA
BA
DON’T CARE
NOTE:
1. PRE = PRECHARGE; ACT = ACTIVE; AR = AUTO REFRESH; RA = Row Address; and BA = Bank Address.
2. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be
active during clock positive transitions.
3. NOP or COMMAND INHIBIT are the only commands allowed until after tRFC time; CKE must be active during clock posi-
tive transitions.
4. “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e., must precharge all
active banks).
5. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown.
6. The second AUTO REFRESH is not required and is only shown as an example of two back-to-back AUTO REFRESH com-
mands.
SYMBOL
tCH
tCL
tCK (2.5)
tCK (2)
tIHF
-6/6T/6T
MIN MAX
0.45 0.55
0.45 0.55
6
13
7.5 13
0.75
-75E/75Z
MIN MAX
0.45 0.55
0.45 0.55
7.5 13
7.5 13
0.90
-75
MIN MAX
0.45 0.55
0.45 0.55
7.5
13
10
13
0.90
UNITS
tCK
tCK
ns
ns
ns
SYMBOL
tISF
tIHS
tISS
tRFC
tRP
-6/6T/6T
MIN MAX
0.75
0.8
0.8
72
18
-75E/75Z
MIN MAX
0.90
1
1
75
15
-75
MIN MAX
0.90
1
1
75
20
UNITS
ns
ns
ns
ns
ns
09005aef8076894f
256MBDDRx4x8x16_2.fm - Rev. F 6/03 EN
71
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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