BAT68-06 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BAT68-06

Silicon Schottky Diodes

Siemens AG 

BAT 68 …

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Parameter

Breakdown voltage

IR = 10 µA

Reverse current

VR = 1 V

VR = 1 V, TA = 60 ˚C

Forward voltage1)

IF = 1 mA

IF = 10 mA

Diode capacitance

VR = 0, f = 1 MHz

Differential forward resistance

IF = 5 mA, f = 10 kHz

Symbol

min.

VBR

8

Values

typ. max.

–

–

Unit

V

IR

µA

–

–

0.1

–

–

1.2

VF

mV

–

–

340

–

–

500

CT

–

–

1

pF

rf

–

–

10

Ω

1) Forward voltage matching, types -04, -05, -06, -07 IF = 10 mA, ∆VF = 20 mV max.

Semiconductor Group

3

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