INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ44N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID= 25A
VGS= ±20V;VDS= 0
VDS= 55V; VGS= 0
VDS= 55V; VGS= 0; Tj= 150℃
IS= 25A; VGS= 0
MIN MAX UNIT
55
V
2
4
V
0.032
Ω
±100
nA
25
250
μA
1.3
V
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isc Website:www.iscsemi.cn