2N5672 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5672 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5671 2N5672
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5671
90
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=0.2A ;IB=0
V
2N5672
120
VCEsat Collector-emitter saturation voltage IC=15A; IB=1.2A
0.75
V
VBEsat Base-emitter saturation voltage
IC=15A ;IB=1.2A
1.5
V
VBE
Base-emitter on voltage
IC=15A ; VCE=5V
1.6
V
ICEO
Collector cut-off current
VCE=80V; IB=0
10
mA
2N5671 VCE=110V; VBE(off)=1.5V
12
2N5672 VCE=135V; VBE(off)=1.5V
10
固I电NC半H导A体NGE SEMICONDUCTOR ICEV
Collector
cut-off current
2N5671
2N5672
VCE=100V;VBE(off)=1.5V;
TC=150℃
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=15A ; VCE=2V
20
hFE-2
DC current gain
IC=20A ; VCE=5V
20
fT
Trainsistion frequency
IC=2A ; VCE=10V;f=1MHz
40
mA
15
10
10
mA
100
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=15A ;IB1=- IB2=1.2A
VCC=30V;tp=0.1ms
0.5
μs
1.5
μs
0.5
μs
2
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