2N5671 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
2N5671 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N5671 2N5672
DESCRIPTION
·With TO-3 package
·High current ,high speed
APPLICATIONS
·Intended for high current and fast
switching industrial applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
固I电NC半H导A体NGE SEMICONDUCTOR VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
2N5671
2N5672
Collector-emitter voltage
2N5671
2N5672
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
150
90
120
7
30
UNIT
V
V
V
A
IB
Base current
10
A
PD
Total Power Dissipation
TC=25℃
140
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W
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