2N3553 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

MFG CO.

2N3553

NPN SILICON HIGH FREQUENCY TRANSISTOR

Semelab - > TT Electronics plc  

2N3553

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

VCEO(sus) Collector Emitter Sustaining Voltage IC = 200mA IB = 0

40

V(BR)EBO Emitter Base Breakdown Voltage

IE = 0.1mA IC = 0

4.0

ICEO

Collector Cut Off Current

VCE = 30V

IB = 0

ICEX

Collector Cut Off Current

VBE(off) = 1.5V

VCE = 30V

VCE = 65V

TC = 200°C

IEBO

Emitter Cut Off Current

VBE = 4V

IC= 0

hFE

DC Current Gain

IC = 250mA VCE = 1.0V

10

VCE(sat) Collector Emitter Saturation Voltage IC = 250mA IB = 50mA

fT

Current Gain - Bandwidth Product

IC = 100mA

f = 100MHz

VCE = 28V

Cobo

Output Capacitance

IE = 0

f = 100kHz

VCB = 30V

Pin

Power Input

Pout = 2.5W

f =175MHz

VCE = 28V

Gpe

Common Emitter Amplifier Power

Pout = 2.5W VCE = 28V

10

Gain

f =175MHz

N

Collector Efficiency

Pout = 2.5W VCE = 28V

50

f =175MHz

Typ.

500

8.0

Max. Unit

V

0.1

5.0

mA

1.0

0.1

—

1.0

V

MHz

10

pF

0.25 W

dB

%

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 5619

Issue 1

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