Philips Semiconductors
UHF power transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage, open emitter; IC = 15 mA
Collector-emitter breakdown voltage, open base; IC = 30 mA
Emitter-base breakdown voltage, open collector; IE = 1,5 mA
Collector cut-off current, VBE = 0; VCE = 16 V
Second breakdown energy, L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain, IC = 0,9 A; VCE = 10 V
Transition frequency at f = 500 MHz(1), −IE = 0,9 A; VCB = 12,5 V
Collector capacitance at f = 1 MHz, IE = ie = 0; VCB = 12,5 V
Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V
Collector-stud capacitance
Note
1. Measured under pulse conditions: tp = 50 µs; δ < 1%.
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICES
ESBR
hFE
fT
Cc
Cre
Ccs
Product specification
BLU97
>
36 V
>
16 V
>
3V
<
7,5 mA
>
2,3 mJ
>
25
typ.
100
typ.
4,0 GHz
typ.
10 pF
typ.
7 pF
typ.
1,2 pF
handboo1k,2h0alfpage
hFE
80
MDA362
handbook4, .h8alfpage
fT
(GHz)
3.2
MDA363
40
1.6
0
0
0.8
1.6
2.4
3.2
IC (A)
Fig.4 Tj = 25 °C; VCE = 10 V; typical values.
0
0
0.8
1.6
2.4
3.2
−IE (A)
Fig.5 VCB = 12,5 V; f = 500 MHz; tp = 50 µs;
Tj = 25 °C; typical values.
August 1986
4