SP8M3 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
MFG CO.
SP8M3 Datasheet PDF : 6 Pages
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Transistors
P-ch
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− −10 µA VGS= −20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS=−30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
− 40 56
ID= −4.5A, VGS= −10V
∗
Static drain-source on-state
resistance
RDS (on)
−
57 80 mΩ ID= −2.5A, VGS= −4.5V
∗
− 65 90
ID= −2.5A, VGS= −4.0V
∗
Forward transfer admittance Yfs 3.5 −
−
S ID= −2.5A, VDS= −10V
∗
Input capacitance
Ciss
− 850 −
pF VDS= −10V
Output capacitance
Coss
− 190 −
pF VGS=0V
Reverse transfer capacitance Crss
− 120 − pF f=1MHz
Turn-on delay time
td (on)
−
10
−
ns ID= −2.5A, VDD −15V
∗
Rise time
tr
−
25
−
ns VGS= −10V
∗
Turn-off delay time
td (off)
−
60
−
ns RL=6.0Ω
∗
Fall time
tf
−
25
−
ns RG=10Ω
∗
Total gate charge
Qg
− 8.5 − nC VDD −15V
∗
Gate-source charge
Qgs
− 2.5 − nC VGS= −5V
∗
Gate-drain charge
Qgd
− 3.0 − nC ID= −4.5A
∗
∗Pulsed
zBody diode characteristics (Source-Drain Characteristics) (Ta=25°C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
Conditions
VSD
−
− −1.2 V IS= −1.6A, VGS=0V
∗
SP8M3
Rev.A
3/5
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