TIP2955 View Datasheet(PDF) - Power Innovations
Part Name
Description
MFG CO.
TIP2955 Datasheet PDF : 6 Pages
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Copyright © 1997, Power Innovations Limited, UK
TIP2955
PNP SILICON POWER TRANSISTOR
JANUARY 1972 - REVISED MARCH 1997
q Designed for Complementary Use with the
TIP3055 Series
q 90 W at 25°C Case Temperature
B
q 15 A Continuous Collector Current
q Customer-Specified Selections Available
C
SOT-93 PACKAGE
(TOP VIEW)
1
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
VCBO
VCER
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-100
V
-70
V
-7
V
-15
A
-7
A
90
W
3.5
W
62.5
mJ
-65 to +150
°C
-65 to +150
°C
260
°C
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -10 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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