; PWB130A GateCharacteristics
2
10
5
2
10
PPeeaakk FFoorrwwaarrdd GGaattee VVoollttaagg((1100VV))
150℃ 25℃
Average
Gate
PoPweea(rk 1G0aWte)
Powe(r 1W)
5
-30℃
2
Maximum Gate Voltage that will not terigger any unit
10 2
5 102 2
5 103 2
5
Gate Curren(t mA)
Average On-State Current Vs Power Dissipation
(Single phase half wave)
250
D.C.
200
150
100
θ=180゜
θ=120゜
θ=90゜
θ=60゜
θ=30゜
Per one element
On-State Voltage max
5
2
103
5
2
102
5
Maximmuumm
Tj=150℃
2
101
5
0
0.5
1.0
1.5
2.0
2.5
3.0
On-State Voltage(V)
Average On-State Current Vs Maximum Allowable
Case Temperature(Single phase half wave)
160
150
140
130
120
Per one element
2
360。
θ: Conduction Angle
110
2
100
50
360。
θ=30゜ θ=90゜ θ=180゜
90
θ=30゜
: Conduction Angle
θ=60゜ θ=120゜
DD..CC..
0
0
50
100
150
200
250
0 20 40 60 80 100 120 140 160 180 200 220
Average On-State Curren(t A)
Average On-State Curren(t A)
Surge On-State Current Rating
(Non-Repetitive)
3500
Transient Thermal Impedance
0.3
3000
2500
Per one element
Tj=25℃
60Hz
0.2
Per one element
Junction to Case
2000
0.1
1500
0
1
2
5
10
20
Time(cycles)
50 100
0
10ー3 2
5 10ー2 2 5 10ー1 2 5 100 2
Time t(sec)
5 101