A1265 View Datasheet(PDF) - Quanzhou Jinmei Electronic

Part Name

Description

MFG CO.

A1265

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-7A; IB=-0.7A

VBE

Base-emitter voltage

IC=-5A ; VCE=-5V

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=-140V; IE=0

VEB=-5V; IC=0

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=5V

fT

Transition frequency

IC=-1A ; VCE=-5V

Cob

Output capacitance

IE=0 ; VCB=10V ;f=1MHz

‹ hFE-1 Classifications

R

O

55-110

80-160

Product Specification

2SA1265N

MIN TYP. MAX UNIT

-140

V

-0.8 -2.0 V

-1.0 -1.5 V

-5 μA

-5 μA

55

160

35

30

MHz

480

pF

2

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