50N06 View Datasheet(PDF) - Unspecified

Part Name

Description

MFG CO.

50N06

MOSFET

Unspecified 

Chinahaiso electronic Co.Ltd

http://www.chinahaiso.com

MOSFET

GFP 50N06

GFP 50N06

FEATURES (参数)

Low RDs(on) (0.023 Ω)@Vgs=10V

Low Gate Charge (Typical 39 nC)

Low Crss (typical 110 pF)

Maximum Junction Temperature range (175 ℃)

Absolute maximum ratings T=25℃ unless otherwise noted

Characteristics

Symbol

Drain-SourceVoltage

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance ,Junction-to Case

Drain-source Diode Forward Voltage

BVDSS

ID

VGS

EAS

PD

TSTG

RθJC

VSD

Value

60

50

±20

470

130

-55 –175

1.15

1.4

Units

V

A

V

mJ

W

℃

℃/W

V

1 of 2

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