IXTQ62N15P View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
IXTQ62N15P Datasheet PDF : 5 Pages
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IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Symbol
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
V = 10 V; I = 0.5 I , pulse test
14 24
S
DS
D
D25
VGS = 0 V, VDS = 25 V, f = 1 MHz
2250
pF
660
pF
185
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 10 Ω (External)
27
ns
38
ns
76
ns
35
ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70
nC
20
nC
38
nC
(TO-3P)
(TO-220)
0.21
0.25
0.42° C/W
° C/W
° C/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
62 A
ISM
Repetitive
150 A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
1.5 V
trr
IF = 25 A, -di/dt = 100 A/µs
QRM
VR = 100 V, VGS = 0 V
150
ns
2.0
µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2
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