NTMFS4833NT1G(2006) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
MFG CO.
NTMFS4833NT1G Datasheet PDF : 7 Pages
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NTMFS4833N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
−
0.8
1.0
V
TJ = 125°C
−
0.68
−
−
38
−
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
−
19
−
ns
−
19
−
−
36
−
nC
Source Inductance
LS
Drain Inductance
Gate Inductance
LD
LG
TA = 25°C
Gate Resistance
RG
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
−
0.50
−
nH
−
0.005
−
nH
−
1.84
−
nH
−
1.0
−
W
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