IRLZ44NPBF View Datasheet(PDF) - International Rectifier

Part Name

Description

MFG CO.

IRLZ44NPBF

HEXFET® Power MOSFET

International Rectifier 

IRLZ44NPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

55 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 0.022

VGS = 10V, ID = 25A „

RDS(on)

Static Drain-to-Source On-Resistance

––– ––– 0.025 Ω VGS = 5.0V, ID = 25A „

––– ––– 0.035

VGS = 4.0V, ID = 21A „

VGS(th)

Gate Threshold Voltage

1.0 ––– 2.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

21 ––– ––– S VDS = 25V, ID = 25A

IDSS

Drain-to-Source Leakage Current

––– ––– 25

––– ––– 250

µA VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

–––

–––

––– 100

––– -100

nA

VGS = 16V

VGS = -16V

Qg

Total Gate Charge

––– ––– 48

ID = 25A

Qgs

Gate-to-Source Charge

––– ––– 8.6 nC VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

––– ––– 25

VGS = 5.0V, See Fig. 6 and 13 „

td(on)

Turn-On Delay Time

––– 11 –––

VDD = 28V

tr

td(off)

tf

Rise Time

Turn-Off Delay Time

Fall Time

––– 84 ––– ns ID = 25A

––– 26 –––

RG = 3.4Ω, VGS = 5.0V

––– 15 –––

RD = 1.1Ω, See Fig. 10 „

LD

Internal Drain Inductance

LS

Internal Source Inductance

––– 4.5 –––

––– 7.5 –––

Between lead,

nH 6mm (0.25in.)

from package

and center of die contact

D

G

S

Ciss

Input Capacitance

––– 1700 –––

VGS = 0V

Coss

Output Capacitance

––– 400 ––– pF VDS = 25V

Crss

Reverse Transfer Capacitance

––– 150 –––

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

––– ––– 47

––– ––– 160

MOSFET symbol

A showing the

integral reverse

p-n junction diode.

D

G

S

––– ––– 1.3 V TJ = 25°C, IS = 25A, VGS = 0V „

––– 80 120 ns TJ = 25°C, IF = 25A

––– 210 320 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 470µH

RG = 25Ω, IAS = 25A. (See Figure 12)

ƒ ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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