ILD211T(2004) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
MFG CO.
ILD211T
(Rev.:2004)
(Rev.:2004)
Vishay Semiconductors
ILD211T Datasheet PDF : 7 Pages
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ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Collector-emitter leakage
current
Collector-emitter capacitance
Test condition
IC = 10 µA
IE = 10 µA
VCE = 10 V, IF = 0
VCE = 0
Symbol
Min
Typ.
Max
Unit
BVCEO
70
V
BVECO
7.0
V
ICEO
5.0
50
nA
CCE
10
pF
Coupler
Parameter
Collector-emitter saturation
voltage
Capacitance (input-output)
Isolation test voltage
Resistance, input to output
Test condition
IF = 10 mA, IC = 2.5 mA
t = 1.0 sec.
Symbol
Min
Typ.
VCE(sat)
CIO
0.5
VISO
3000
RIO
100
Max
Unit
0.4
V
pF
VRMS
GΩ
Current Transfer Ratio
Parameter
DC Current Transfer Ratio
Test condition
VCE = 5.0 V, IF = 10 mA
VCE = 5.0 V, IF = 1.0 mA
Part
Symbol
Min
Typ.
Max
Unit
ILD205T CTRDC
40
80
%
ILD206T CTRDC
63
125
%
ILD207T CTRDC
100
200
%
ILD211T CTRDC
20
%
ILD213T CTRDC
100
%
ILD205T CTRDC
13
30
%
ILD206T CTRDC
22
45
%
ILD207T CTRDC
34
70
%
ILD217T CTRDC
100
120
%
Document Number 83647
Rev. 1.4, 26-Oct-04
www.vishay.com
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