STGW30NC60KD View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STGW30NC60KD

30 A - 600 V - short circuit rugged IGBT

STMicroelectronics 

STGW30NC60KD

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VCES

IC(1)

IC(1)

ICL(2)

ICP(3)

VGE

IF

IFSM

Collector-emitter voltage (VGE = 0)

Collector current (continuous) at TC = 25 °C

Collector current (continuous) at TC = 100 °C

Turn-off latching current

Pulsed collector current

Gate-emitter voltage

Diode RMS forward current at TC = 25 °C

Surge non repetitive forward current tp = 10 ms

sinusoidal

PTOT

tscw

Tj

Total dissipation at TC = 25 °C

Short circuit withstand time, VCE = 0.5 V(BR)CES

Tj = 125°C, RG = 10 Ω, VGE = 12 V

Operating junction temperature

1. Calculated according to the iterative formula:

Value

600

60

28

125

125

±20

30

120

200

10

– 55 to 150

Ic(Tc)

=

---------------------------T----J--(--M-----A---X---)----–----T----c---------------------------

Rthj – c × VCE(sat)(MAX) ⋅ (Tc,Ic)

2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V

3. Pulse width limited by max. junction temperature allowed

Table 3. Thermal resistance

Symbol

Parameter

Thermal resistance junction-case IGBT max.

Rthj-case

Thermal resistance junction-case diode max.

Rthj-amb Thermal resistance junction-ambient max

Value

0.625

1.5

50

Unit

V

A

A

A

A

V

A

A

W

µs

°C

Unit

°C/W

°C/W

°C/W

3/14

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