STB11NM60FD-1(2006) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB11NM60FD-1
(Rev.:2006)
(Rev.:2006)
STMicroelectronics
STB11NM60FD-1 Datasheet PDF : 17 Pages
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STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 250V, ID = 5.5A
RG = 4.7Ω VGS = 10V
(see Figure 14)
VDD = 400V, ID = 11A,
RG = 4.7Ω, VGS = 10V
(see Figure 16)
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 11A, VGS = 0
ISD = 11A, VDD = 50V
di/dt = 100A/µs,
(see Figure 19)
ISD = 11A, VDD = 50V
di/dt = 100A/µs,
Tj=150°C
(see Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ. Max. Unit
20
ns
16
ns
10
ns
15
ns
24
ns
Min Typ. Max Unit
11 A
44 A
1.5 V
140
ns
680
nC
A
A
260
ns
1600
nC
13
A
5/17
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