STP7N65M2(2014) View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STP7N65M2
(Rev.:2014)

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages

STMicroelectronics 

STP7N65M2,

STU7N65M2

N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2

Power MOSFETs in TO-220 and IPAK packages

Datasheet - preliminary data

7$%

7$%







72

Features

Order code

VDS

RDS(on)

max

ID

STP7N65M2

650 V 1.15 Ω

5A

STU7N65M2

650 V 1.15 Ω

5A







• Extremely low gate charge

• Excellent output capacitance (Coss) profile

,3$.

• 100% avalanche tested

• Zener-protected

Figure 1. Internal schematic diagram

(2, TAB)

G(1)

Applications

• Switching applications

Description

These devices are N-channel Power MOSFET

developed using the MDmesh™ M2 technology.

Thanks to the strip layout associated to an

improved vertical structure, the device exhibits

both low on-resistance and optimized switching

characteristics. It is therefore suitable for the most

demanding high efficiency converters.

Order code

STP7N65M2

STU7N65M2

S(3)

AM15572v1

Table 1. Device summary

Marking

Package

7N65M2

TO-220

7N65M2

IPAK

Packaging

Tube

Tube

October 2014

DocID026788 Rev 2

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

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