74HC283DB,118 View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
74HC283DB,118 Datasheet PDF : 20 Pages
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Philips Semiconductors
74HC283
4-bit binary full adder with fast carry
Table 8: Dynamic characteristics …continued
GND = 0 V; tr = tf = 6 ns; CL = 50 pF; see Figure 7.
Symbol Parameter
Conditions
Tamb = −40 °C to +125 °C
tPHL, tPLH propagation delay CIN to S1
propagation delay CIN to S2
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
propagation delay CIN to S3
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
propagation delay CIN to S4
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
propagation delay An or Bn to Sn
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
propagation delay CIN to COUT
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
propagation delay An or Bn to
COUT
tTHL, tTLH output transition time
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
[1] CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
∑(CL × VCC2 × fo) sum of outputs.
9397 750 13811
Product data sheet
Rev. 03 — 11 November 2004
Min
Typ
Max
Unit
-
-
240
ns
-
-
48
ns
-
-
41
ns
-
-
270
ns
-
-
54
ns
-
-
46
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
345
ns
-
-
69
ns
-
-
59
ns
-
-
315
ns
-
-
63
ns
-
-
54
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
295
ns
-
-
59
ns
-
-
50
ns
-
-
110
ns
-
-
22
ns
-
-
19
ns
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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